Semiconductor laser
文献类型：专利
| 作者 | NOGUCHI HIDEAKI |
| 发表日期 | 1986-03-27 |
| 专利号 | JP1986059791A |
| 著作权人 | NEC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To provide a laser light exit region in a high concentration P type region and to obtain high output, by interposing an active layer of superlattice construction between clad layers having wider forbidden bands and by bending the joint area near the laser resonating surface. CONSTITUTION:A semi-insulating N type GaAs substrate 31 is provided with an active layer 33 of superlattice construction consisting of multiple semiconduc tor layers of 100Angstrom or less, with a first clad layer 32 and with a second clad layer 34. The active layer 33 has a narrower forbidden band than those of the layers 32 and 34. The P-N junction between a low concentration P type impurity diffusion region 36 and the substrate 31 is vertical to the surfaces 40 and 40' of a laser resonator, but bent near the surfaces 40 and 40'. According ly, a laser light exit region 43 is located in the high concentration P type region 35. The absorption of laser light energy hupsilon1 can be effectively prevented by regulating the band construction of the high concentration P type region. |
| 公开日期 | 1986-03-27 |
| 申请日期 | 1984-08-30 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/86508]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORP |
| 推荐引用方式 GB/T 7714 | NOGUCHI HIDEAKI. Semiconductor laser. JP1986059791A. 1986-03-27. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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