Waveguide pin photodiode having graded index distribution centering around optical absorption layer
文献类型：专利
| 作者 | PARK, SAHNG GI; SIM, EUN-DEOK; PARK, JEONG WOO; SIM, JAE SIK; BAEK, YONG SOON |
| 发表日期 | 2007-06-14 |
| 专利号 | US20070133636A1 |
| 著作权人 | ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Waveguide pin photodiode having graded index distribution centering around optical absorption layer |
| 英文摘要 | A waveguide PIN photodiode is provided. The waveguide PIN photodiode includes a lower light guide layer, a light absorption layer, an upper light guide layer, and a cladding layer. The lower light guide is formed on a substrate, and the light absorption layer is formed on the lower light guide layer. The upper light guide layer is formed on the light absorption layer, and the cladding layer is formed on the upper light guide layer. The lower light guide layer, the light absorption layer, and the upper light guide layer constitute a core layer, which is an optical waveguide, and graded index distribution is symmetrically formed in a depth direction, centering around the light absorption layer having a highest refractive index. |
| 公开日期 | 2007-06-14 |
| 申请日期 | 2006-07-06 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/86509]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE |
| 推荐引用方式 GB/T 7714 | PARK, SAHNG GI,SIM, EUN-DEOK,PARK, JEONG WOO,et al. Waveguide pin photodiode having graded index distribution centering around optical absorption layer. US20070133636A1. 2007-06-14. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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