半導体レーザ装置
文献类型：专利
| 作者 | 成塚 重弥; 石川 正行; 板谷 和彦; 国分 義弘; 大場 康夫 |
| 发表日期 | 1997-08-15 |
| 专利号 | JP2685800B2 |
| 著作权人 | 株式会社東芝 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 半導体レーザ装置 |
| 英文摘要 | PURPOSE:To improve reliability of a current constricting structure by using silicon having a low constant of diffusion as a dopant for a current blocking layer while determining a thickness of the current blocking layer so as not to cause punch through. CONSTITUTION:On a substrate 11 with plane orientation of (100), there are deposited a buffer layer 12, a buffer layer 13, a clad layer 14, an active layer 15, a clad layer 16, a clad layer 17, a clad layer 18, a contact layer 19 and a contact layer 20 sequentially in that order by the MOCVD process using a methyl derivative of group III metal and a group V hydride compound. An SiO2 film 26 is formed linearly on the contact layer 20. The contact layer 20 masked with the film 26 is etched so that the contact layer 19 is exposed and a mesa 27 is formed. The contact layer 19 masked with the mesa 27 is etched and the clad layer 18 is etched until the clad layer 17 is exposed, and a mesa 28 is formed. An N-type GaAs current blocking layer 21 is then deposited by the MOCVD process. After the SiO2 film 26 is removed, a P-type GaAs contact layer 22 is grown and electrodes 23 and 24 are deposited thereon. In this manner, a semiconductor laser device having both current constricting effect and optical wave guide effect can be produced with good producibility and high yield. |
| 公开日期 | 1997-12-03 |
| 申请日期 | 1988-05-13 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/86510]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 株式会社東芝 |
| 推荐引用方式 GB/T 7714 | 成塚 重弥,石川 正行,板谷 和彦,等. 半導体レーザ装置. JP2685800B2. 1997-08-15. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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