Semiconductor laser
文献类型：专利
| 作者 | NAGAI HARUO; NOGUCHI YOSHIO; TAKAHEI KENICHIRO |
| 发表日期 | 1984-07-24 |
| 专利号 | CA1171506A |
| 著作权人 | NIPPON TELEGRAPH & TELEPHONE PUBLIC CORPORATION |
| 国家 | 加拿大 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | - 28 - Abstract of the Disclosure A semiconductor laser comprising a semiconductor substrate of conductivity type, a laminated layer body constracted by laminating a plurality of layer com- ponents on the prescribed region of the surface of the semiconductor substrate and a burying laminated layer body which surrounds said laminated layer body in con- tact with the lateral wall thereof and is formed of a plurality of layer components laminated on the pre- scribed region of the surface of the semiconductor sub- strate. The laminated layer body is formed of a first cladding layer having the same conductivity type as that (first conductivity type) of the semiconductor substrate, first active layer, second cladding layer having the opposite conductivity type (second conductivity type) to that of the semiconductor substrate, second active layer and third cladding layer of the first conductivity type laminated in the order mentioned as counted from the surface of the semiconductor substrate. The burying laminated layer body is formed of a semiconductor elec- trode layer of the second conductivity type and low spe- cific resistivity which substantially contacts the second cladding layer, function as a common electrode layer sometimes confines light and current, and acts as a common electrode layer, and two groups of burying layers respectively provided on the prescribed regions of the top and bottom surface of said semiconductor electrode layer and, when current runs through the semi- conductor electrode layer, then restricts the passage of current to any other crystals layer than the semi- conductor electrode layer by utilizing the back bias of the PN junction and also confine light and current in the first and second activated layers because of a small refractive index and a wide forbidden band gap. Where a prescribed amount of direct current is supplied to the first electrode mounted on the upper side of the laminated layer body, second electrode deposited on the bottom side of said laminated layer body and third elec- trode set on the semiconductor electrode layer included in the burying layer body, then the first and second active layers arranged very close to each other simulta- neously oscillate two independent laser beams admitting of modulation with a low threshold current value. |
| 公开日期 | 1984-07-24 |
| 申请日期 | 1981-11-12 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/86511]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON TELEGRAPH & TELEPHONE PUBLIC CORPORATION |
| 推荐引用方式 GB/T 7714 | NAGAI HARUO,NOGUCHI YOSHIO,TAKAHEI KENICHIRO. Semiconductor laser. CA1171506A. 1984-07-24. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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