Semiconductor laser
文献类型：专利
| 作者 | SUZAKI SHINZOU; SEKINE MAMORU |
| 发表日期 | 1985-12-06 |
| 专利号 | JP1985246690A |
| 著作权人 | FUJIKURA DENSEN KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To improve reproducibility, and to enhance yield by forming a striped mesa section consisting of a first clad layer, an active layer and a second clad layer shaped onto a substrate in succession, current constriction layers formed on both sides of the mesa section and a cap layer directly shaped onto said both layers. CONSTITUTION:An N-InP first clad layer 12 is formed onto an N-InP substrate 11 through liquid-phase epitaxial growth, an InGaAsP active layer 13 is shaped onto the first clad layer 12, and a P-InP second layer 14 is formed onto the active layer 13, thus manufacturing an original wafer. The upper surface of the original wafer is masked, and bodh sides of the original wafer are mesa-etched, thus shaping a striped mesa section 15. A mask on the mesa section is removed, P-InP and N-InP current constriction layers 16, 17 are formed on both sides in the width direction of the mesa section 25 through second liquid-phase epitaxial growth, and a P-InGaAsP cap layer 18 is shaped directly onto the second clad layer 14 as an uppermost section in the mesa section 15 and the N-InP current constriction layers 17. |
| 公开日期 | 1985-12-06 |
| 申请日期 | 1984-05-21 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/86513]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJIKURA DENSEN KK |
| 推荐引用方式 GB/T 7714 | SUZAKI SHINZOU,SEKINE MAMORU. Semiconductor laser. JP1985246690A. 1985-12-06. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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