Semiconductor laser device and method for manufacturing the same
文献类型：专利
| 作者 | KASHIMA, TAKAYUKI; MAKITA, KUOJI; YOSHIKAWA, KENJI |
| 发表日期 | 2007-10-04 |
| 专利号 | US20070230530A1 |
| 著作权人 | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device and method for manufacturing the same |
| 英文摘要 | A semiconductor laser device including the following: a first conductivity type semiconductor substrate; a first conductivity type cladding layer disposed on the semiconductor substrate; an active layer disposed on the first conductivity type cladding layer; a second conductivity type first cladding layer disposed on the active layer; a second conductivity type second cladding layer that is disposed on the second conductivity type first cladding layer and forms a ridge waveguide extending in a resonator direction; a second conductivity type contact layer disposed on the second conductivity type second cladding layer; and an end face window structure in which impurities are diffused into an active layer region of an end face portion in the resonator direction. Thus a band gap is enlarged compared to a gain region that is a portion other than the end face portion. In the second conductivity type first and second cladding layers, an impurity concentration in the gain region is the same as or larger than that in a region of the end face window structure. This configuration can form an end face window structure with a smaller refractive index variation, achieve a higher resistance than a conventional window structure, and control Zn diffusion in the resonator direction. |
| 公开日期 | 2007-10-04 |
| 申请日期 | 2006-12-06 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/86523]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
| 推荐引用方式 GB/T 7714 | KASHIMA, TAKAYUKI,MAKITA, KUOJI,YOSHIKAWA, KENJI. Semiconductor laser device and method for manufacturing the same. US20070230530A1. 2007-10-04. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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