Semiconductor laser device
文献类型：专利
| 作者 | WATANABE HITOSHI; FUJIWARA MASATOSHI; TAKEMOTO AKIRA; KAKIMOTO SHOICHI |
| 发表日期 | 1990-12-10 |
| 专利号 | JP1990298091A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To enable the oscillation of single wavelength without a mode skipping even at the time of high output by thickening a thickness of a barrier layer in adjacency of a region where a light density is relatively high, compared with other regions, in an element of a distributor-feedback-type semiconductor laser device comprising a barrier layer structure. CONSTITUTION:After an n-type barrier layer 6 is formed on an InGaAsP active layer 2, the both side ends are etched smoothly while leaving the center part. Furthermore, an InGaAs guide layer 4 is grown on said n-type barrier layer 6, after which diffraction gratings 5 are formed. Then, a clad layer is re-grown. Thus, if a thickness of the n-type barrier layer 6 is thicker in a specified region, the connection of the diffraction gratings and the light becomes weak in that region. Namely, a connection constant K of the diffraction gratings 5 is small. Accordingly, as the ununiformity of a light density distribution does not become so remarkable at the time of high output, the single mode oscillation can be obtained. |
| 公开日期 | 1990-12-10 |
| 申请日期 | 1989-05-12 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/86525]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | WATANABE HITOSHI,FUJIWARA MASATOSHI,TAKEMOTO AKIRA,et al. Semiconductor laser device. JP1990298091A. 1990-12-10. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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