Semiconductor laser
文献类型：专利
| 作者 | NISHIMOTO HIROYUKI |
| 发表日期 | 1988-02-09 |
| 专利号 | JP1988031187A |
| 著作权人 | NEC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To reduce junction capacitance within a semiconductor laser and realize ultrahigh-speed modulation without using dielectric film such as SiO2 by forming a high resistance semiconductor layer to a single side of reverse mesa projection of a semiconductor multilayered film substrate which is left only almost at the center of semiconductor multilayered film. CONSTITUTION:An N-InP buffer layer 3, InGaAsP active layer 1, P-InP clad layer 4 and P-InGaAsP contact layer 5 are sequentially formed on a semi- insulating substrate 2. The projection at the center is formed as the inverse mesa type and the electrode metals 6 and 7 are separated by a vapor deposition process. In the case of this structure, the InGaAsP 1 is surrounded by a high- resistance semiconductor layer 9 or a little amount of N-InP layer 10. Therefore, a signal current injected from the electrode metal 6 almost flows into the InGaAsP active layer 1 and the structure shows excellent response to high frequency. Thereby, parasitic capacitance within the semiconductor laser can be removed and since dielectric film such as SiO2 etc. is not used, ultrahigh- speed semiconductor laser device having modulation band of 10 GHz or higher and excellent reliability can be obtained. |
| 公开日期 | 1988-02-09 |
| 申请日期 | 1986-07-24 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/86526]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORP |
| 推荐引用方式 GB/T 7714 | NISHIMOTO HIROYUKI. Semiconductor laser. JP1988031187A. 1988-02-09. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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