半導体レ-ザ
文献类型：专利
| 作者 | 今仲 行一 |
| 发表日期 | 1995-04-10 |
| 专利号 | JP1995032291B2 |
| 著作权人 | オムロン株式会社 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 半導体レ-ザ |
| 英文摘要 | PURPOSE:To produce a semiconductor laser in high luminous intensity at low oscillation threshold value current by a method wherein an active layer is composed of multiple quantum well structure while the peripheral parts of light emitting part of active layer is impressed with voltage by voltage impressing electrodes through the intermediary of insulating film on the growing surface side to reduce the refractive index of the well structure. CONSTITUTION:A part corresponding to an active layer 3 is composed of a multiple quantum well structure repeatedly laminated with barrier layers (A layers) and well layers(B layers) as well as peripheral parts excluding the central light emitting part to be impressed with an electric field. When the multiple quantum well structure is impressed with the electric field in the thickness direction, the refractive index thereof is reduced. The active layer 3 emits recoupled light by flowing current from a P side electrode 7 to an N side electrode 8 to laser-oscillate by the light resonance between the electrode 7 and a reflecting film 9 further to pick up the light transmitting the reflecting film 9 as output laser beams. When voltage is impressed upon the circuit between electrode 6 and 8, an electric field is made on the part excluding the central part of active layer 3 to reduce the refractive index confining the laser beams within the central part of active layer 3. Through these procedures, a refractive index waveguide type surface light emitting laser oscillating at low threshold value current is produced by one time crystal growth to emit laser beams in high luminous intensity at the central part of active layer 3. |
| 公开日期 | 1995-04-10 |
| 申请日期 | 1986-05-14 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/86531]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | オムロン株式会社 |
| 推荐引用方式 GB/T 7714 | 今仲 行一. 半導体レ-ザ. JP1995032291B2. 1995-04-10. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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