Manufacture of semiconductor laser device
文献类型：专利
| 作者 | YOSHITOSHI KEIICHI; IKEGAMI TAKATOSHI |
| 发表日期 | 1991-03-27 |
| 专利号 | JP1991071687A |
| 著作权人 | SANYO ELECTRIC CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser device |
| 英文摘要 | PURPOSE:To obtain a semiconductor laser capable of emitting laser rays of different wavelengths by a method wherein a second active layer whose band gap is larger than that of a first active layer is formed on the first active layer. CONSTITUTION:A first active layer 4 of small band gap is made to grow epitaxially on a flat 12 of a substrate 1 for a certain growth time that it does not grow on a ridge 11 of the substrate 1 taking advantage of an anisotropic growth characteristic that growth speed is faster on a recess than on a ridge. A second active layer 5 whose band gap is larger than that of the first active layer 4 is grown on the ridge 11 and the flat 12, whereby the second active layer 5 on the ridge 11 emits and the first active layer 4 on the flat 12 emits light. By this setup, this type of a semiconductor laser capable of optionally and easily setting the wavelength difference between the emitted laser ray can be obtained. |
| 公开日期 | 1991-03-27 |
| 申请日期 | 1989-08-10 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/86535]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SANYO ELECTRIC CO LTD |
| 推荐引用方式 GB/T 7714 | YOSHITOSHI KEIICHI,IKEGAMI TAKATOSHI. Manufacture of semiconductor laser device. JP1991071687A. 1991-03-27. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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