半導体レ-ザ
文献类型：专利
| 作者 | 宇高 勝之; 堺 和夫; 松島 裕一 |
| 发表日期 | 1996-03-27 |
| 专利号 | JP1996031653B2 |
| 著作权人 | 国際電信電話株式会社 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 半導体レ-ザ |
| 英文摘要 | A semiconductor laser in which a light emitting region (A) having a light emitting layer (3,4) and a waveguide region (B,C) having a waveguide layer (6,7) which is coupled to at least one side of the light emitting layer with a high efficiency, are integrated on the same substrate. The light emitting region includes an active filter section (A2) having a diffraction grating (5) equipped with a band-pass filter function. The light emitting region and the waveguide region are electrically isolated (14,15,16) and are each provided with an electrode (10,11,12,13). The oscillation wavelength of the semiconductor laser is changed by changing the refractive indices of at least the waveguide region and the active filter section through voltage application or current injection to the electrodes, thereby producing a narrow-linewidth, single-wavelength, oscillation output light of a wavelength which corresponds to the transmission wavelength of the active filter section determined by the preset refractive indices of the waveguide region and the active filter section. |
| 公开日期 | 1996-03-27 |
| 申请日期 | 1987-07-21 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/86542]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 国際電信電話株式会社 |
| 推荐引用方式 GB/T 7714 | 宇高 勝之,堺 和夫,松島 裕一. 半導体レ-ザ. JP1996031653B2. 1996-03-27. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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