Semiconductor laser element and manufacture thereof
文献类型：专利
| 作者 | NAKATSU HIROSHI; ATSUNUSHI FUMIHIRO; INOGUCHI KAZUHIKO; OKUMURA TOSHIYUKI; SEKI AKINORI; TAKIGUCHI HARUHISA |
| 发表日期 | 1991-10-08 |
| 专利号 | JP1991227086A |
| 著作权人 | シャープ株式会社 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser element and manufacture thereof |
| 英文摘要 | PURPOSE:To enable an active layer to be accurately controlled in width by a method wherein a mesa stripe-like multilayered film of double-hereto structure provided with the side face of a {111} plane is selectively grown in a groove formed on a substrate. CONSTITUTION:A dielectric film 2 of SiO2 film is formed on an N-type InP substrate 1, and a groove is formed through photoetching so as to extend along a [011] direction. An N-type InP buffer layer 3, an N-type InP clad layer 4, a non-doped InGaAsP active layer 5, and a P-type InP clad layer 6 are continuously grown on the surface of the substrate 1 in the groove 12. In succession, a mesa stripe-like laminated structure lower part 13 whose side face is a (111) B plane is formed on the groove 12. Next, a P-type InP layer 7 and a P-type InGaAsP cap layer 8 are successively formed through an LPE method. Then, an SOG film 9 is formed on the dielectric film 2, an AuZn electrode 10 is formed on the flattened surface of a wafer, an an AuGe electrode 11 is built on the rear of the substrate |
| 公开日期 | 1991-10-08 |
| 申请日期 | 1990-01-31 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/86543]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | シャープ株式会社 |
| 推荐引用方式 GB/T 7714 | NAKATSU HIROSHI,ATSUNUSHI FUMIHIRO,INOGUCHI KAZUHIKO,et al. Semiconductor laser element and manufacture thereof. JP1991227086A. 1991-10-08. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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