Semiconductor laser device
文献类型：专利
| 作者 | OKADA MASATO |
| 发表日期 | 1990-01-25 |
| 专利号 | JP1990022883A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To control an optical output by controlling an electric current flowing in a p-type active layer by a method wherein an electrode is formed on an n-type GaAs current-blocking layer and an n-type GaAs current-blocking layer formed on a second p-type clad layer of AlxGa1-xAs including a ridge part is formed. CONSTITUTION:An electrode 10 of an n-type GaAs current-blocking layer is formed on a part where one part of a p-type GaAs contact layer 6 has been removed. A second p-type clad layer 4 of Al0.45Ga0.55As, an n-type GaAs current-blocking layer 5 and the p-type GaAs contact layer 6 correspond to a collector, a base and an emitter of a p-n-p transistor, respectively; a laser diode which is composed of the second p-type clad layer 4 of Al0.45Ga0.55As, a p-type active layer 3 of Al0.15Ga0.85As and a first n-type clad layer 2 of Al0.45Ga0.55As is bonded to the collector. Then, a p-side electrode 9 is grounded; a voltage of V (V<0) is applied to an n-side electrode 8 in such a way that the p-n-p transistor becomes an active region. During this process, a collector current flowing in the laser diode is decided by a voltage to be applied to the electrode 10 of the n-type GaAs current-blocking layer 5 as the base electrode. Thereby, it impossible to control an optical output by means of the voltage to be applied to the electrode on the n-type GaAs current-blocking layer; a drive circuit and the like are simplified. |
| 公开日期 | 1990-01-25 |
| 申请日期 | 1988-07-11 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/86546]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | OKADA MASATO. Semiconductor laser device. JP1990022883A. 1990-01-25. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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