Edge emission type semiconductor device
文献类型：专利
| 作者 | MIZUOCHI HITOSHI; YAMAMOTO AKISUKE; YOSHIDA KAZUTOMI; HIGUCHI HIDEYO |
| 发表日期 | 1988-08-22 |
| 专利号 | JP1988202977A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Edge emission type semiconductor device |
| 英文摘要 | PURPOSE:To transmit effectively light to an optical fibre and the like, by making a current injected from an electrode be effectively injected into an active layer by a first and a second block layer on the right and the left sides of the active layer, and making generated light be guided to and end surface by a first and a second clad layer, and the first and the second block layers. CONSTITUTION:An active layer 18 is completely buried in a stripe trench, on the right and the left sides of which first and second block layers 4 and 5 having energy band gap larger than the active layer 18 are arranged, so that the active layer 18 itself operates as an active region Consequently, the injected carrier flows effectively into the active region 1, and does not diffuse toward the right and the left sides. Generated light is effectively guided to an end surface, by first and second clad layers 3 and 6 and first and second block layers 4 and 5. Thereby, a large light output can be transmitted in the case of coupling with an optical fibre, and the like. |
| 公开日期 | 1988-08-22 |
| 申请日期 | 1987-02-18 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/86550]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | MIZUOCHI HITOSHI,YAMAMOTO AKISUKE,YOSHIDA KAZUTOMI,et al. Edge emission type semiconductor device. JP1988202977A. 1988-08-22. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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