Optical semiconductor device
文献类型：专利
| 作者 | FUKUDA MITSUO; SATO NORIFUMI |
| 发表日期 | 1990-08-01 |
| 专利号 | JP1990194686A |
| 著作权人 | NIPPON TELEGR & TELEPH CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Optical semiconductor device |
| 英文摘要 | PURPOSE:To make uneven the current in an active layer and to change the oscillation frequency of an optical semiconductor device by a method wherein the device is constituted of the active layer, a clad layer and electrode layers obtained by separating one of positive and negative electrodes into two or more by isolation grooves, the base parts of the grooves are made to intrude into the clad layer and the base parts of the grooves are made to position apart 0.5 to 5mum from the active layer. CONSTITUTION:An InGaAs active layer 1, an InGaAsP guide layer 2, an InP clad layer 3 and a P-type InGaAsP gap layer 4 are laminated on an N-type InP substrate 5 and the surface of this layer 4 is covered with a P side electrode. In this constitution, the electrode is split into 3, the base parts of isolation grooves 10 used for the split are made to position in the layer 3; moreover, these base parts are made to position within a distance of 0.5 to 5mum from the layer According to such a way, as an application of a different voltage to the split respective electrodes is made possible, a current injection into the layer 1 is changed and the oscillation wavelength of an optical semiconductor device is changed. Moreover, a dielectric isolation in the electrodes is made secure. |
| 公开日期 | 1990-08-01 |
| 申请日期 | 1989-01-24 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/86554]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON TELEGR & TELEPH CORP |
| 推荐引用方式 GB/T 7714 | FUKUDA MITSUO,SATO NORIFUMI. Optical semiconductor device. JP1990194686A. 1990-08-01. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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