Semiconductor laser with variable wavelength
文献类型：专利
| 作者 | MITO IKUO |
| 发表日期 | 1989-02-23 |
| 专利号 | JP1989049293A |
| 著作权人 | NEC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser with variable wavelength |
| 英文摘要 | PURPOSE:To continuously vary an oscillation frequency without changing an oscillation threshold value by installing an active layer whose gain is obtained from a light-emitting region and a Bragg reflection region from among the light-emitting region, a phase control region and the Bragg reflection region. CONSTITUTION:After a diffraction grating 80 has been formed in a Bragg reflection (DBR) region 300 of a substrate 1, a light waveguide layer 2, a barrier layer 3, an active layer 4 and a clad layer 5 are laminated one upon another. Then, the layers 3, 4, 5 are removed selectively exclusive of a light-emitting region 100 and the DBR region 300; a second clad layer 10 is laminated. In succession, after grooves 51, 52 sandwiching a stripe 50 to be used as the light- emitting region have been formed, a current-blocking layer 6, a current-confining layer 7, a buried layer 8 and a contact layer 9 are formed. Electrodes 20, 21, 22 are formed on the side of the layer 9. During this process, a semiconductor layer around the contact layer 9 between individual regions and around the stripe 50 is removed so that an electric current can flow to the three regions independently. |
| 公开日期 | 1989-02-23 |
| 申请日期 | 1987-08-19 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/86556]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORP |
| 推荐引用方式 GB/T 7714 | MITO IKUO. Semiconductor laser with variable wavelength. JP1989049293A. 1989-02-23. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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