Manufacture of semiconductor laser
文献类型：专利
| 作者 | SAKAKIBARA YASUSHI; NAKAJIMA YASUO; NAMISAKI HIROBUMI |
| 发表日期 | 1987-12-09 |
| 专利号 | JP1987283686A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser |
| 英文摘要 | PURPOSE:To obtain a semiconductor laser having high reliability at the time of operating with high output by forming a groove stopped near the ends of laser resonators of both sides along the specific direction of a substrate having a specific surface formed with a current blocking layer on the upper surface, and then forming a buried laser structure on the substrate having a groove. CONSTITUTION:an N-type InP current blocking layer 2 and a P-type InP current blocking layer 3 are formed on the (100) surface of a P-type InP substrate 1 by one crystal growth, and a groove 11 arriving at the vicinity of the ends of a laser resonator at both sides is formed along the direction. A P-type InP clad layer 4, an InGaAsP active layer 5, an N-type InP clad layer 6, an N-type InGaAsP contact layer 7 are sequentially formed on a groove 11 and a part 12 formed with a groove by second crystal growth to manufacture a semiconductor laser. |
| 公开日期 | 1987-12-09 |
| 申请日期 | 1986-05-31 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/86560]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | SAKAKIBARA YASUSHI,NAKAJIMA YASUO,NAMISAKI HIROBUMI. Manufacture of semiconductor laser. JP1987283686A. 1987-12-09. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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