Semiconductor laser device and manufacture thereof
文献类型：专利
| 作者 | WAKITA KOUICHI; KURUMADA KATSUHIKO; NAWATA KIYOSHI |
| 发表日期 | 1985-06-21 |
| 专利号 | JP1985115285A |
| 著作权人 | NIPPON DENSHIN DENWA KOSHA |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device and manufacture thereof |
| 英文摘要 | PURPOSE:To obtain a semiconductor laser device having a plurality of longitudinal modes, by forming dielectric thin film on the output end faces of a semiconductor laser diode, said dielectric thin film has a refractive index approximately equal to a square root of a refractive index of the active layer of the laser diode. CONSTITUTION:A clad layer 12, an active layer 13, another clad layer 14 and a cap layer 15 are formed in that order on one surface of a semiconductor crystal substrate 11 to form a layered structure, which is provided with electrodes 16 and 17 on the both faces in the layered direction. Dielectric thin film 21 and 22 of nitride are formed on the both end faces 18 and 19 of the active layer 13 forming a laser resonator such that the refractive index of the dielectric films is approximately equal to the square root of the refractive index of the active layer 13. When the refractive index of the dielectric thin films 21 and 22 is equal to the square root of that of the laser diode, and their thickness is equal to a quarter of a wavelength lambda of light or a value obtained by multiplying an odd number thereto, the reflection coefficient of the semiconductor laser device is zero, and the device produces no laser oscillation. Therefore, a proper value is selected for a film thickness (d) to decrease the reflection coefficient appropriately to control the number of longitudinal modes in laser oscillation. |
| 公开日期 | 1985-06-21 |
| 申请日期 | 1983-11-28 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/86561]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON DENSHIN DENWA KOSHA |
| 推荐引用方式 GB/T 7714 | WAKITA KOUICHI,KURUMADA KATSUHIKO,NAWATA KIYOSHI. Semiconductor laser device and manufacture thereof. JP1985115285A. 1985-06-21. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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