Semiconductor laser
文献类型：专利
| 作者 | OTOSHI SO; YAMAGUCHI KEN; KANAI SANEYO; UDA TAKESHI; MURAYAMA YOSHIMASA; KAYANE NAOKI; KAJIMURA TAKASHI |
| 发表日期 | 1987-03-19 |
| 专利号 | JP1987062576A |
| 著作权人 | HITACHI LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To control lateral mode of low threshold value and high efficiency by providing a photoabsorbing layer necessary for photoconduction near an active layer, and forming a current narrowing layer at father position to eliminate a thyristor effect. CONSTITUTION:A P-type GaAs current narrowing layer 2, and an N-type GaAs photoabsorbing layer 3 are sequentially grown by an MOCVD method on an N-type GaAs substrate 1, and a groove 8 is then formed by etching. Thereafter, a flat N-type Ga0.55Al0.45As clad layer 4, an undoped GaAs0.86Al0.14As active layer 5, an N-type Ga0.55Al0.45As clad layer 6, a P-type GaAs cap layer 7-1 are sequentially grown by a liquid-phase growing method, and then an N-type electrode 11 and a P-type electrode 12 are formed. The roles of photoabsorbing and current narrowing are separately shared for the photoabsorbing layer and the current narrowing layer, the photoabsorbing layer is provided near the active layer and the narrowing layer is formed at further side, thereby eliminating a thyristor effect. Thus, a semiconductor laser which has high yield, low threshold value and high efficiency can be obtained. |
| 公开日期 | 1987-03-19 |
| 申请日期 | 1985-09-13 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/86563]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI LTD |
| 推荐引用方式 GB/T 7714 | OTOSHI SO,YAMAGUCHI KEN,KANAI SANEYO,et al. Semiconductor laser. JP1987062576A. 1987-03-19. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。