Semiconductor element
文献类型：专利
| 作者 | TADATOMO KAZUYUKI; TOYAMA OSAMU |
| 发表日期 | 1992-09-11 |
| 专利号 | JP1992257276A |
| 著作权人 | MITSUBISHI CABLE IND LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor element |
| 英文摘要 | PURPOSE:To eliminate emission absorption caused by a lattice mismatching buffer layer and obtain bright emission by a semicomductor element constituted if GaInP crystal. CONSTITUTION:A semiconductor element is formed by successively growing multi-layers of a lattice mismatching buffer layer 2 whose major ingredient is AlGaInP, a GaInP activating layer 4 and AlGaInP clad layers 3 and 5 on a GaP substrate The maximum band gap of mixed crystal which constitutes the lattice mismatching buffer layer 2 is permitted to be larger than the band gap of the activating layer 4 by 0.05eV or more. Thus, since the emission absorption of the lattice mismatching buffer layer 2 is eliminated, the emission brightness of the element is provided and emission directions are not limited. |
| 公开日期 | 1992-09-11 |
| 申请日期 | 1991-02-08 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/86567]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI CABLE IND LTD |
| 推荐引用方式 GB/T 7714 | TADATOMO KAZUYUKI,TOYAMA OSAMU. Semiconductor element. JP1992257276A. 1992-09-11. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。