Nitride semiconductor laser device
文献类型：专利
| 作者 | KOHDA, SHINICHI |
| 发表日期 | 2011-01-25 |
| 专利号 | US7876798 |
| 著作权人 | ROHM CO., LTD. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Nitride semiconductor laser device |
| 英文摘要 | A nitride semiconductor laser device is formed by growing a group III nitride semiconductor multilayer structure on a substrate containing no Al. The group III nitride semiconductor multilayer structure forms a structure including an n-type semiconductor layer, a p-type semiconductor layer, and a light emitting layer held between the n-type semiconductor layer and the p-type semiconductor layer. The n-type semiconductor layer includes an n-type cladding layer containing Al and an n-type guide layer having a smaller band gap than the n-type cladding layer. The p-type semiconductor layer includes a p-type cladding layer containing Al and a p-type guide layer having a smaller band gap than the p-type cladding layer. A removal region is formed by partially removing the layers containing Al in the group III nitride semiconductor multilayer structure from the substrate. |
| 公开日期 | 2011-01-25 |
| 申请日期 | 2008-12-26 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/86568]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | ROHM CO., LTD. |
| 推荐引用方式 GB/T 7714 | KOHDA, SHINICHI. Nitride semiconductor laser device. US7876798. 2011-01-25. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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