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文献类型：专利
| 作者 | SAWAI MASAAKI |
| 发表日期 | 1987-08-14 |
| 专利号 | JP1987037832B2 |
| 著作权人 | HITACHI LTD |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | - |
| 英文摘要 | PURPOSE:To prevent contamination of the surface of a laser diode and to improve the yield thereof with reverse voltage malfunction reduced by protecting a P-N junction exposed surface at least by a CVD SiO2 film. CONSTITUTION:A surface A-A' is formed as laser beam oscillating confronting surface with an SiO2 film 7 formed by sputtering in a chip having an N type GaAs crystal 1 as a main body, and an SiO2 film 8 is formed by a CVD process (Vapor phase chemical reaction accumulation) on the opposite surface B-B' in parallel with the laser beam. Since the P-N junction exposed surface is coated at least by the protective film on the chip, the reliability of the diode can be improved. |
| 公开日期 | 1987-08-14 |
| 申请日期 | 1979-08-29 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/86573]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI LTD |
| 推荐引用方式 GB/T 7714 | SAWAI MASAAKI. -. JP1987037832B2. 1987-08-14. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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