Embedded structure semiconductor laser device
文献类型：专利
| 作者 | KOIZUMI YOSHIHIRO; SUGAO SHIGEO; KURODA NAOTAKA |
| 发表日期 | 1990-07-25 |
| 专利号 | JP1990188983A |
| 著作权人 | NEC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Embedded structure semiconductor laser device |
| 英文摘要 | PURPOSE:To reduce amount of leakage current and achieve high-efficiency and high-output operation by making acceptor concentration of a P clad layer to be high and by making the layer thickness to be thinner. CONSTITUTION:A semiconductor laser is formed in a double hetero structure where an active region 13 and clad layers 12 and 14 with a larger forbidden bandwidth than that of this active region sandwiching this active region are located on an N-type semiconductor substrate 1 Then, a high-resistance semiconductor layer 16 with a deep level is embedded in both sides of the active region 13, an acceptor concentration of a P type clad layer 14 is set to 1X10 [cm] or more, and the thickness of the P-type clad layer 14 and a P-type contact layer 15 is formed to be equal to 2mum or less. Thus, it can be used as a high-resistance semiconductor layer embedded layer satisfying each condition applicable to a high exernal differential quantum efficiency, a high productivity, and a distribution feedback semiconductor laser. |
| 公开日期 | 1990-07-25 |
| 申请日期 | 1989-01-17 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/86575]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORP |
| 推荐引用方式 GB/T 7714 | KOIZUMI YOSHIHIRO,SUGAO SHIGEO,KURODA NAOTAKA. Embedded structure semiconductor laser device. JP1990188983A. 1990-07-25. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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