Semiconductor laser device
文献类型：专利
| 作者 | SHIBUYA TAKAO; ITO KUNIO; SHIMIZU YUICHI |
| 发表日期 | 1987-12-23 |
| 专利号 | JP1987296490A |
| 著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To reduce the absorption of laser light at an end plane by coating with a small reflection factor protection film on the front end plane of a resonator and with a great reflection factor protection film in the rear end plane of the resonator. CONSTITUTION:On a substrate formed with a ridge wherein the width is made narrower only near the front end plane F of a resonator, each layer including an active layer is formed and on the front end plane F of the resonator, a protection film of reflection factor less than 32% is coated and on the rear end plane R of the resonator, a protection film of reflection factor more than 32% is coated. For example, a mesa is formed on the (100) plane of the p-type GaAs substrate 1 in the direction , an n-type GaAs current constriction layer 2 is grown and two parallel ridges 2a, 2b are formed. The width of the ridges 2a, 2b is made 10mum within 15mum from the front end plane F and 50mum in the region except the above region. The first-the fourth layers 3-5 are formed, a wafer is cleft, an Al2O3 film 1/4 wavelength thick is coated on the front end plane F and the Al2O3 film 1/4 wavelength thick and an Si film 1/4 wavelength thick are alternately coated with four layers on the rear end plane R. |
| 公开日期 | 1987-12-23 |
| 申请日期 | 1986-06-17 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/86576]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | SHIBUYA TAKAO,ITO KUNIO,SHIMIZU YUICHI. Semiconductor laser device. JP1987296490A. 1987-12-23. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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