Semiconductor laser and manufacture thereof
文献类型：专利
| 作者 | SASAI YOICHI; OGURA MOTOTSUGU |
| 发表日期 | 1990-08-24 |
| 专利号 | JP1990213183A |
| 著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser and manufacture thereof |
| 英文摘要 | PURPOSE:To reduce astigmatism by providing a region of a low retractive index on the lateral sides in the vicinity of a stripe-shaped active layer by diffusing impurities of a second conductivity type from the surface of an (AlxGa1-x)InP clad layer of the second conductivity type having a projecting part, in a double hetero structure constructed of an (AlxGa1-X)InP clad layer of a first conductivity type, an InGaP active layer and said clad layer of the second conductivity type formed which are formed on a GaAs substrate of the first conductivity type. CONSTITUTION:An (AlxGa1-x)InP clad layer 13 of a first conductivity type (0 |
| 公开日期 | 1990-08-24 |
| 申请日期 | 1989-02-14 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/86577]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | SASAI YOICHI,OGURA MOTOTSUGU. Semiconductor laser and manufacture thereof. JP1990213183A. 1990-08-24. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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