Manufacture of lambda/4 shift diffraction grating
文献类型：专利
| 作者 | FUJIWARA MASATOSHI |
| 发表日期 | 1992-01-08 |
| 专利号 | JP1992003485A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of lambda/4 shift diffraction grating |
| 英文摘要 | PURPOSE:To form an inverted pattern by a single resist, and to simplify a process while improving the accuracy of a diffraction grating by a method wherein a picture inverted resist on the specified region of a substrate coated with the resist is exposed by specified exposure energy, interference exposure is conducted to the whole resist by the same exposure energy, the resist is baked and developed, and the resist pattern of the diffraction grating is formed. CONSTITUTION:The upper section of a semiconductor substrate 1 is coated with an inverted resist 2, the resist 2 is pre-baked, one part of the substrate is coated with the pattern of a mask 4, the substrate is exposed only by quantity, where exposure energy reaches A, by using an exposure light source 3, and the whole resist is interference-exposed by energy A. When the resist is reversal-baked and developed, the resist is removed at the positions of total exposure energy of 2A and 0, and the resist remains at the position A, thus inverting the photosensitive characteristics of the resist to interference exposure in a region exposed by the light source 3 and a region not exposed. The substrate 1 is etched while using the resist pattern 2 as a mask, thus forming a diffraction grating to the substrate |
| 公开日期 | 1992-01-08 |
| 申请日期 | 1990-04-19 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/86578]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | FUJIWARA MASATOSHI. Manufacture of lambda/4 shift diffraction grating. JP1992003485A. 1992-01-08. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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