Semiconductor laser device
文献类型:专利
作者 | KUNIYASU, TOSHIAKI; FUKUNAGA, TOSHIAKI |
发表日期 | 2002-10-10 |
专利号 | US20020146051A1 |
著作权人 | NICHIA CORPORATION |
国家 | 美国 |
文献子类 | 发明申请 |
其他题名 | Semiconductor laser device |
英文摘要 | A semiconductor laser device is disclosed that improves reliability during high-power oscillation. On a plane of an n-type GaAs substrate, grown are an n-type GaAs buffer layer, an n-type In0.48Ga0.52P lower cladding layer, an n-type or i-type Inx1Ga1-x1As1-y1Py1 optical waveguide layer, an i-type GaAs1-y2Py2 tensile-strain barrier layer, an Inx3Ga1-x3As1-y3Py3 compressive-strain quantum-well active layer, an i-type GaAs1-y2Py2 tensile-strain barrier layer, a p-type or i-type Inx1Ga1-x1As1-y1Py1 upper optical waveguide layer, a p-type In0.48Ga0.52P first upper cladding layer, a GaAs etching stop layer, a p-type In0.48Ga0.52P second upper cladding layer and a p-type GaAs contact layer. Two ridge trenches are formed on the resultant structure, and current non-injection regions are formed by removing the p-type GaAs contact layer in portions extending inwardly by 30 mum from cleavage positions of edge facets of the resonator on a top face of a ridge portion between the ridge trenches. |
公开日期 | 2002-10-10 |
申请日期 | 2002-04-03 |
状态 | 失效 |
源URL | [http://ir.opt.ac.cn/handle/181661/86584] ![]() |
专题 | 半导体激光器专利数据库 |
作者单位 | NICHIA CORPORATION |
推荐引用方式 GB/T 7714 | KUNIYASU, TOSHIAKI,FUKUNAGA, TOSHIAKI. Semiconductor laser device. US20020146051A1. 2002-10-10. |
入库方式: OAI收割
来源:西安光学精密机械研究所
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