中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Semiconductor laser device

文献类型:专利

作者KUNIYASU, TOSHIAKI; FUKUNAGA, TOSHIAKI
发表日期2002-10-10
专利号US20020146051A1
著作权人NICHIA CORPORATION
国家美国
文献子类发明申请
其他题名Semiconductor laser device
英文摘要A semiconductor laser device is disclosed that improves reliability during high-power oscillation. On a plane of an n-type GaAs substrate, grown are an n-type GaAs buffer layer, an n-type In0.48Ga0.52P lower cladding layer, an n-type or i-type Inx1Ga1-x1As1-y1Py1 optical waveguide layer, an i-type GaAs1-y2Py2 tensile-strain barrier layer, an Inx3Ga1-x3As1-y3Py3 compressive-strain quantum-well active layer, an i-type GaAs1-y2Py2 tensile-strain barrier layer, a p-type or i-type Inx1Ga1-x1As1-y1Py1 upper optical waveguide layer, a p-type In0.48Ga0.52P first upper cladding layer, a GaAs etching stop layer, a p-type In0.48Ga0.52P second upper cladding layer and a p-type GaAs contact layer. Two ridge trenches are formed on the resultant structure, and current non-injection regions are formed by removing the p-type GaAs contact layer in portions extending inwardly by 30 mum from cleavage positions of edge facets of the resonator on a top face of a ridge portion between the ridge trenches.
公开日期2002-10-10
申请日期2002-04-03
状态失效
源URL[http://ir.opt.ac.cn/handle/181661/86584]  
专题半导体激光器专利数据库
作者单位NICHIA CORPORATION
推荐引用方式
GB/T 7714
KUNIYASU, TOSHIAKI,FUKUNAGA, TOSHIAKI. Semiconductor laser device. US20020146051A1. 2002-10-10.

入库方式: OAI收割

来源:西安光学精密机械研究所

浏览0
下载0
收藏0
其他版本

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。