Semiconductor light-emitting device
文献类型：专利
| 作者 | USHIJIMA ICHIROU |
| 发表日期 | 1984-07-11 |
| 专利号 | JP1984119884A |
| 著作权人 | FUJITSU KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light-emitting device |
| 英文摘要 | PURPOSE:To prevent the generation of a crystal defect in an active layer by dividing an upper clad layer into two, extremely thinning the thickness of a lower layer being directly in contact with the active layer and removing a region, which does not correspond to a stripe region of an upper layer. CONSTITUTION:A lower clad layer 12, the active layer 13, the upper clad layer first layer 14' in approximately 0.3mum thickness and a layer 14'' as the upper clad layer second layer in approximately 2mum thickness are formed on the surface of a substrate 11, an upper confining layer 14 is left, and the layer 14'' is removed. A current limiting layer 15 is buried and formed at a growth temperature of approximately 550 deg.C. The upper clad first layer 14' functions as a protective layer during the growth period to directly protect the active layer 13 from a thermal atmosphere, and a thermal deterioration is prevented. |
| 公开日期 | 1984-07-11 |
| 申请日期 | 1982-12-27 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/86588]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU KK |
| 推荐引用方式 GB/T 7714 | USHIJIMA ICHIROU. Semiconductor light-emitting device. JP1984119884A. 1984-07-11. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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