Variable wavelength semiconductor laser
文献类型：专利
| 作者 | UOMI KAZUHISA; SAKANO SHINJI; OKAI MAKOTO; KAYANE NAOKI |
| 发表日期 | 1989-11-27 |
| 专利号 | JP1989293683A |
| 著作权人 | 株式会社日立製作所 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Variable wavelength semiconductor laser |
| 英文摘要 | PURPOSE:To obtain a laser beam whose spectral line width is narrow and whose wavelength can be changed over a wide range by a method wherein a laser beam generation part whose radiation angle is variable is connected to a diffraction grating by using a light waveguide and a cycle of the diffraction grating is changed in accordance with the radiation angle. CONSTITUTION:An active layer 2 and a clad layer 3 are formed to be stripe- shaped on a substrate 1; after that, buried layers 11, 12 are formed. Then, a light waveguide layer 4 is grown; a diffraction grating 5 whose cycle is changed in accordance with an angle is formed on it. An insulating region 13 is formed; after that, electrodes 6, 8 and electrodes 7a, 7b for changing a radiated beam are formed. A beam generated from the active layer 2 is propagated through the light waveguide layer 4; when the beam reaches a region of the diffraction grating 5, only the beam of a Bragg reflection wavelength is reflected; accordingly, an injection amount of an electric current to the electrodes 7a, 7b is changed and a radiation angle is changed; then, a laser oscillation wavelength can be changed. |
| 公开日期 | 1989-11-27 |
| 申请日期 | 1988-05-23 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/86589]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 株式会社日立製作所 |
| 推荐引用方式 GB/T 7714 | UOMI KAZUHISA,SAKANO SHINJI,OKAI MAKOTO,et al. Variable wavelength semiconductor laser. JP1989293683A. 1989-11-27. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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