Manufacture of distributed feedback laser
文献类型:专利
作者 | KUSUKI TOSHIHIRO |
发表日期 | 1990-03-08 |
专利号 | JP1990068976A |
著作权人 | FUJITSU LTD |
国家 | 日本 |
文献子类 | 发明申请 |
其他题名 | Manufacture of distributed feedback laser |
英文摘要 | PURPOSE:To make it possible to prevent the deformation of a diffraction grating due to heat by a method wherein a deformation prevention layer made of InGaAs is formed on an InP substrate to form a diffraction grating, the deformation prevention layer is removed by melt back by a liquid growth method of InGaAs having a larger energy gap and a guide layer is grown. CONSTITUTION:A deformation prevention layer 8 made of InGaAsP or InGaAs on an InP substrate 1 and the deformation prevention layer 8 and the surface of the InP substrate 1 are partially etched to form a diffraction grating 9. Next, the deformation prevention layer is removed by melt back by a liquid growth method of lnGaAs having a larger energy gap and a guide layer 3a made of InGaAsP is grown on the InP substrate Then, for example, after an InGaAsP active layer 4a, an InP clad layer 5a are in turn grown, the wafer is buried in a laser of a buried type structure and a P electrode 10, an N electrode 11, and an SiNAR film (reflection prevention film) 12 are formed. |
公开日期 | 1990-03-08 |
申请日期 | 1988-09-05 |
状态 | 失效 |
源URL | [http://ir.opt.ac.cn/handle/181661/86593] ![]() |
专题 | 半导体激光器专利数据库 |
作者单位 | FUJITSU LTD |
推荐引用方式 GB/T 7714 | KUSUKI TOSHIHIRO. Manufacture of distributed feedback laser. JP1990068976A. 1990-03-08. |
入库方式: OAI收割
来源:西安光学精密机械研究所
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