Manufacture of semiconductor laser device
文献类型：专利
| 作者 | KUMABE HISAO |
| 发表日期 | 1986-12-16 |
| 专利号 | JP1986285783A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser device |
| 英文摘要 | PURPOSE:To fuse and bond a laser chip and heat radiating body excellently and adequately, by forming solder layers having specified widths on an electrode metal layer and the surface of the heat radiating body through a diffusion preventing layer, which is included at least in the electrode metal layer, beforehand, heating and compressing both solder layers at a melting point or higher in a reducing atmosphere, thereby fusing and fixing the solder layers. CONSTITUTION:A solder layer 11 is formed on an electrode metal layer 9 on the side close to an active region 3 in a laser chip 1 through a diffusion preventing layer 10 by evaporation, plating and the like beforehand. A solder layer 11 is formed on a metal layer 12, which is formed on the corresponding surface of a heat radiating body 14 and becomes a diffusion preventing layer. Both solder layers have the specified thicknesses as required. Both solder layers are heated and compressed at a melting point or higher in a reducing atmosphere and fused and fixed. The same kind of the solder layer 11 is formed on the electrode metal layer 9 of the laser chip 1 and the corresponding metal layer 12 of the heat radiating body 14 beforehand. In fusing, both parts are bonded and fixed highly accurately and uniformly with good wettability when they are heated and compressed. |
| 公开日期 | 1986-12-16 |
| 申请日期 | 1985-06-12 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/86596]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | KUMABE HISAO. Manufacture of semiconductor laser device. JP1986285783A. 1986-12-16. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。