Semiconductor laser device
文献类型：专利
| 作者 | SUYAMA, TAKAHIRO; KONDO, MASAFUMI; SASAKI, KAZUAKI; HOSODA, MASAHIRO; TAKAHASHI, KOSEI; HAYAKAWA, TOSHIRO |
| 发表日期 | 1991-06-04 |
| 专利号 | US5022036 |
| 著作权人 | SHARP KABUSHIKI KAISHA |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | A semiconductor laser device is disclosed which comprises a semiconductor substrate and a multi-layered crystal structure disposed on the substrate, the multi-layered crystal structure containing a first cladding layer, a quantum-well active layer for laser oscillation, and a second cladding layer with a striped ridge portion for current injection, wherein the difference in the effective refractive index between the region underneath the striped ridge portion and the adjacent regions thereto is greater in the vicinity of at least one of the facets than inside of the facets. |
| 公开日期 | 1991-06-04 |
| 申请日期 | 1989-12-27 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/86598]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP KABUSHIKI KAISHA |
| 推荐引用方式 GB/T 7714 | SUYAMA, TAKAHIRO,KONDO, MASAFUMI,SASAKI, KAZUAKI,et al. Semiconductor laser device. US5022036. 1991-06-04. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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