Semiconductor laser device
文献类型：专利
| 作者 | ISHIKAWA MASAYUKI; NITTA KOICHI; NISHIKAWA YUKIE; SUGAWARA HIDETO; OKAJIMA MASASUE; HATAGOSHI GENICHI |
| 发表日期 | 1992-08-04 |
| 专利号 | JP1992212487A |
| 著作权人 | 株式会社東芝 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To provide a semiconductor laser device, which is capable of operating up to a high temperature and can be contrived to improve its light output to the maximum which is usable. CONSTITUTION:In a semiconductor laser, in which a double heterostructure part constituted holding an active layer 23, which consists of an In1-y(Ga1-xAlx)yP material (0<=x<1 and 0<=y<1), between clad layers 22 and 24 is formed on a GaAs substrate 21, the thickness of the layer 23 is set into 0.02mum or thereabouts and the lattice constant of the layer 23 is made larger than that of the substrate 21 by 1% or thereabouts. |
| 公开日期 | 1992-08-04 |
| 申请日期 | 1991-01-09 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/86603]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 株式会社東芝 |
| 推荐引用方式 GB/T 7714 | ISHIKAWA MASAYUKI,NITTA KOICHI,NISHIKAWA YUKIE,et al. Semiconductor laser device. JP1992212487A. 1992-08-04. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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