Semiconductor laser
文献类型：专利
| 作者 | TAGUCHI TAKASHI; UENO YOSHIKI |
| 发表日期 | 1990-01-11 |
| 专利号 | JP1990007489A |
| 著作权人 | NIPPON SOKEN INC |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To form a highly efficient semiconductor laser of buried multi-quantum well type of simple structure and easy manufacture by forming a layer of high carrier concentration at least to a part of a clad layer and by making a cut-off layer which holds one conductivity type after impurity introduction. CONSTITUTION:A second clad layer 5 consists of two layers of different carrier concentration. The side in contact with an active layer 4 is an n type AlxGa1-xAs cut-off layer 51 of high carrier concentration and the upper layer is an n-type AlxGa1-xAs clad layer 52. Carrier concentration is set at, for example, 5X10cm for the clad layer 52 and 3X10cm for the n type cut-off layer 5 A carrier concentration of an n-type GaAs cap layer 6 is set at about 1X10cm. A voltage is applied so that an n-type electrode 81 becomes negative and p type electrode 82 becomes positive in this structure. At a Zn diffusion region 93, a p-type first clad layer 31 and a p-type second clad layer 54 are electrically cut off by an n-type cut-off layer 53; therefore, a current can not flow up and down the Zn diffusion region and is constricted in a non-diffusion region to center in the active layer 4. |
| 公开日期 | 1990-01-11 |
| 申请日期 | 1988-06-24 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/86606]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON SOKEN INC |
| 推荐引用方式 GB/T 7714 | TAGUCHI TAKASHI,UENO YOSHIKI. Semiconductor laser. JP1990007489A. 1990-01-11. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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