Manufacture of semiconductor laser device
文献类型：专利
| 作者 | NOMA JUNJI; HIROSE MASANORI |
| 发表日期 | 1992-09-09 |
| 专利号 | JP1992254389A |
| 著作权人 | MATSUSHITA ELECTRON CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser device |
| 英文摘要 | PURPOSE:To eliminate the effect of the transportation of reactive substances contained in an etching solution by carrying out electric chemical etching, using pulse current in the manufacture of a semiconductor laser in ridge waveguide structure. CONSTITUTION:A silicon nitride film 7 is formed on the surface of a semiconductor substrate in a ridge formation area while an ohmic electrode 8 coated with the silicon nitride film 7 is formed in the peripheral section of the substrate. The surface of the substrate is adapted to come into contact with an electrolytic solution 9 where the ohmic electrode 8 is set to a positive pole and an electrolytic side electrode 10 is set to an negative pole. Pulse-like current by an outside power source 11 is arranged to flow wherein the surface of the substrate is electrochemically etched, which forces the etching to proceed only when the current is in an on state. A reactive substance diffusion layer contained in the electrolytic solution near the substrate surface formed then is relaxed by natural convection when the current is in an off state. This construction makes it possible to inhibit the formation of the reactive substance diffusion layer in the etching solution and eliminate the adverse effect of substance transmission which may be responsible to the deterioration of ridge shape and obtain an excellent ridge shape without any recessed part in the bottom. |
| 公开日期 | 1992-09-09 |
| 申请日期 | 1991-02-06 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/86617]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRON CORP |
| 推荐引用方式 GB/T 7714 | NOMA JUNJI,HIROSE MASANORI. Manufacture of semiconductor laser device. JP1992254389A. 1992-09-09. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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