Semiconductor laser
文献类型：专利
| 作者 | KOJIMA KEISUKE; TOKUDA YASUKI; FUJIWARA KENZO; TSUKADA NORIAKI; NOMURA YOSHITOKU; MATSUI TERUHITO |
| 发表日期 | 1988-02-12 |
| 专利号 | JP1988032980A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To suppress laser oscillation with wavelength corresponding on a low quantum level and generate laser oscillation with short wavelength correspondingly on a high quantum level, by forming resonator structure, in which only the light with wavelength corresponding on the high quantum level is selectively reflected, in a semiconductor laser element having an active layer of quantum-well structure. CONSTITUTION:In a semiconductor laser element formed by serially piling a lower electrode 1, a substrate 2, the first conductivity-type clad layer 3, a quantum-well active layer 4, the second conductivity-type clad layer 5, a contact layer 6, and an upper electrode 7, the terminal plane of its resonator is coated with a reflective film 8 having wavelength selectivity. Therefore, resonator loss is increased on a low quantum level to suppress its oscillation, so that laser oscillation is generated on a high quantum level and short-wavelength laser is obtained. The resonator structure can be also provided with wavelength selectivity by installing a diffraction grating 9 inside or outside the resonator. |
| 公开日期 | 1988-02-12 |
| 申请日期 | 1986-07-25 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/86618]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | KOJIMA KEISUKE,TOKUDA YASUKI,FUJIWARA KENZO,et al. Semiconductor laser. JP1988032980A. 1988-02-12. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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