Semiconductor laser element
文献类型：专利
| 作者 | MATSUURA NOBUYUKI |
| 发表日期 | 1986-09-30 |
| 专利号 | JP1986220391A |
| 著作权人 | TOSHIBA CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser element |
| 英文摘要 | PURPOSE:To prevent leakage currents, to make the greater part of injection currents to contribute to laser oscillation and to enable oscillation at low threshold currents by forming a second current constriction layer covering the side wall of a striped groove. CONSTITUTION:A first clad layer 2, an active layer 3, a second clad layer 4 and a current constriction layer 5 are shaped onto an n-type GaAs substrate 1 in succession, and a striped groove reaching up to a section in the vicinity of the active layer is formed through selective wet etching. An n-type AlxGa1-xAs layer is grown on the whole surface in an epitaxial manner, and the n-type AlxGa1-xAs layer 9 is wet-etched only by the film thickness section of the layer 9. A second current constriction layer 8 is left only on the side wall of the striped groove, and an optical guide layer 6 and a contact layer 7 are grown successively. Accordingly, the second current constriction layer 8 consisting of n-type AlxGa1-xAs is shaped onto the side wall of the striped groove, thus bringing the optical guide layer 6 into contact with the second clad layer 4 only on the bottom of the striped groove. |
| 公开日期 | 1986-09-30 |
| 申请日期 | 1985-03-26 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/86623]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | TOSHIBA CORP |
| 推荐引用方式 GB/T 7714 | MATSUURA NOBUYUKI. Semiconductor laser element. JP1986220391A. 1986-09-30. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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