Manufacture of semiconductor laser device
文献类型：专利
| 作者 | DOI KONEN; AIKI KUNIO; FUNAKOSHI KIYOHIKO; KAYANE NAOKI; TAKEDA YUTAKA; NAKAMURA SATOSHI; HIRAO MOTONAO; ITO RYOICHI |
| 发表日期 | 1986-10-24 |
| 专利号 | JP1986239691A |
| 著作权人 | HITACHI LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser device |
| 英文摘要 | PURPOSE:To stabilize a transverse mode, and to reduce the dispersion of various characteristics by laminating five layer semiconductor layers satisfying specific conditions and forming the fifth layer among them to a section substantially correspond ing to a light-emitting region. CONSTITUTION:A first semiconductor layer 23 and second and third semiconductor layers 22 and 24 having forbidden band width larger than the layer 23 and refractive index smaller than the layer 23 under the state in which the layers 22 and 24 hold the layer 23 are shaped onto a semiconductor substrate 2 The thickness of the layer 24 is brought to an extent that one part of waveguide beams projects to the outside of the layer 24 at that time. A fourth semiconductor layer 25 having solubility different from the layer 24 is formed onto the layer 24. A groove, which reaches the layer 24 and the width of a sectional shape thereof on a surface vertical to the progressive direction of beams is narrowed toward the layer 24, is shaped to the layer 25. A fifth semiconductor layer 26 is formed so as to bury the groove. Consequently, an active layer in a semiconductor laser is flattened with excellent reproducibility, and the change of the thickness of a confinement layer shaped outside the active layer can be increased. Accordingly, the semiconductor laser, a transverse mode thereof is stabilized, can be manufactured with high yield. |
| 公开日期 | 1986-10-24 |
| 申请日期 | 1985-08-30 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/86636]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI LTD |
| 推荐引用方式 GB/T 7714 | DOI KONEN,AIKI KUNIO,FUNAKOSHI KIYOHIKO,et al. Manufacture of semiconductor laser device. JP1986239691A. 1986-10-24. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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