Semiconductor laminated material
文献类型：专利
| 作者 | SATO SHIRO; IECHI HIROYUKI |
| 发表日期 | 1988-11-28 |
| 专利号 | JP1988289812A |
| 著作权人 | RICOH CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laminated material |
| 英文摘要 | PURPOSE:To make high technology and complicated control unnecessary, and make it possible to form easily a GaAs epitaxial layer on an Si substrate, by stacking a GaP epitaxial layer on the main surface of the Si substrate, and stacking a GaAs epitaxial layer on the GaP epitaxial layer. CONSTITUTION:A GaP epitaxial layer 2 is stacked on an Si substrate 1, and a GaAs epitaxial layer 3 is stacked on the GaP epitaxial layer 2. As the difference of lattice constants between Si and GaP is so small that the GaP epitaxial layer 2 can easily formed. In the case of forming the GaAs epitaxial layer 3, an anti-phase domain hardly ganerates because both GaP and GaAs have a zinc-blende structure, but the the difference of lattice constants is large. In the case of large difference of lattice constants, the larger the thickness becomes, the more scarcely lattice defect caused by transition and the like generates, so that the best GaAs epitaxial layer 3 is obtained by forming the layer in thickness 50nm or more. Thereby, it is made unnecessary to form superlattice, and the forming of a uniform GaAs epitaxial layer is easily enabled. |
| 公开日期 | 1988-11-28 |
| 申请日期 | 1987-05-21 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/86642]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | RICOH CO LTD |
| 推荐引用方式 GB/T 7714 | SATO SHIRO,IECHI HIROYUKI. Semiconductor laminated material. JP1988289812A. 1988-11-28. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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