Semiconductor laser device
文献类型：专利
| 作者 | NOJIRI HIDEAKI; HARA TOSHITAMI; SEKIGUCHI YOSHINOBU; HASEGAWA MITSUTOSHI; MIYAZAWA SEIICHI |
| 发表日期 | 1987-11-21 |
| 专利号 | JP1987269385A |
| 著作权人 | CANON INC |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To eliminate contamination and the like to be developed after cleaving a general LD and easily make laser beams coming from many points parallel by causing an active layer to have multi quantum-wells and laser beam emission surfaces to be in disorder to serve as a protective coat. CONSTITUTION:Five laminations for N-type GaAs 22, N-type AlGaAs layer 23, non- doping GaAs, and Al0.2Ga0.8As are performed repeatedly on an N-type GaAs substrate 21 according to a molecular beam epitaxy system and finally an GaAs is laminated, resulting in the formation of active areas 24 having multi-quantum wells. In addition, the above areas make two layers; i.e. P-type AlGaAs layer 25, and P GaAs layer 26 grow in sequence to form Si3N4 according to a plasma CVD. After its Si3N4 in a given area is removed, impurities are diffused to develop a mixed crystal 18 and Si3N4 of the rest is processed by etching in order to form a part applied by an electric current 20 and then, Cr-Au is converted into an ohmic electrode 28 by vapor-deposition and after that, etching is performed to separate its electrode, resulting in the formation of non-impregnation area 19 as a remainder. In the next place, an ohmic electrode 29 for N-type of the rear side is formed and is treated by heating and also a resonance face R making anglestheta1 and theta2 is processed vertically according to a reactive ion etching. |
| 公开日期 | 1987-11-21 |
| 申请日期 | 1986-05-19 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/86644]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | CANON INC |
| 推荐引用方式 GB/T 7714 | NOJIRI HIDEAKI,HARA TOSHITAMI,SEKIGUCHI YOSHINOBU,et al. Semiconductor laser device. JP1987269385A. 1987-11-21. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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