Semiconductor laser and its manufacture
文献类型：专利
| 作者 | SHIMA AKIHIRO |
| 发表日期 | 1990-07-16 |
| 专利号 | JP1990181489A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser and its manufacture |
| 英文摘要 | PURPOSE:To make a high-reliability and a high-output operation possible by a method wherein a semiconductor laser is designed applying an internal current constriction type V-channeled substrate inner stripe structure as its basic structure and is provided with a window structure by impurity diffusion. CONSTITUTION:In an internal current constriction type semiconductor laser formed by laminating in order a second conductivity type current stopping layer 2 having a V-shaped groove to reach a substrate 1, a first conductivity type lower clad layer 3, a first or second conductivity type active layer 4 and a second conductivity type upper clad layer 5 on the first conductivity type substrate 1, an impurity for reducing the energy gap of the site of the layer 4 is doped to the substrate. The V-shaped groove is formed into a constitution, in which the groove reaches the interior only of the element on the substrate and does not reach the end parts of the element. The substrate is heated and the impurity passes through the V-shaped groove and is diffused in the site of the layer 4 in the center of the interior of the element. |
| 公开日期 | 1990-07-16 |
| 申请日期 | 1989-01-06 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/86645]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | SHIMA AKIHIRO. Semiconductor laser and its manufacture. JP1990181489A. 1990-07-16. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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