Distributed feedback semiconductor laser
文献类型：专利
| 作者 | KASUKAWA AKIHIKO; KASHIWA SUSUMU |
| 发表日期 | 1988-01-08 |
| 专利号 | JP1988003483A |
| 著作权人 | FURUKAWA ELECTRIC CO LTD:THE |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Distributed feedback semiconductor laser |
| 英文摘要 | PURPOSE:To make it possible to perform operation at a single wavelength and to make it possible to perform operation at a fundamental lateral mode and at a low threshold current value, by forming a diffraction grating on an InP substrate, and surrounding an active layer with a medium having a low refractive index. CONSTITUTION:A diffraction grating 11 is formed on the main surface of an InP substrate 10. On the grating 11, a waveguide layer 12 comprising N-type GaInAsP, a current blocking layer 16 comprising P-type InP and a current blocking layer 17 comprising N-type InP are sequentially laminated and formed. On an active layer 13 and the blocking layer 17, a clad layer 14 comprising P-type InP and a cap layer 15 comprising P-type GaInAsP are sequentially laminated and formed so as to bury a groove 18. Thus, single-wavelength operation is made possible, and operation at a fundamental lateral mode and at a low threshold current value is made possible. |
| 公开日期 | 1988-01-08 |
| 申请日期 | 1986-06-23 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/86655]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FURUKAWA ELECTRIC CO LTD:THE |
| 推荐引用方式 GB/T 7714 | KASUKAWA AKIHIKO,KASHIWA SUSUMU. Distributed feedback semiconductor laser. JP1988003483A. 1988-01-08. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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