Manufacture of semiconductor device
文献类型：专利
| 作者 | AKITA KENZOU |
| 发表日期 | 1984-07-03 |
| 专利号 | JP1984114885A |
| 著作权人 | FUJITSU KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor device |
| 英文摘要 | PURPOSE:To eliminate hindrance accompanied by the fusing with a heat sink and thus improve the working efficiency and the yield by growing a crystal having etching stopping effect in contact with a substrate and then removing the substrate by a chemical etching method. CONSTITUTION:A GaAlAs layer 2, an N type GaAs layer 3, the first clad layer 4 of N type GaAlAs, a GaAs active layer 5, the second clad layer 6 of P type GaAlAs, and an N type GaAs contact layer 7 are successively formed on the GaAs substrate A P type stripe region 9 is formed by selectively forming an insulation film 8. The GaAs substrate 1 is selectively removed with the mixed solution of ammonia water with hydrogen peroxide, and the GaAlAs layer 2 with fluoric acid. A P-side electrode 10 and an N-side electrode 11 are arranged, thus forming a laser element. The N-side electrode 11 is bonded on the heat sink 12. |
| 公开日期 | 1984-07-03 |
| 申请日期 | 1982-12-21 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/86658]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU KK |
| 推荐引用方式 GB/T 7714 | AKITA KENZOU. Manufacture of semiconductor device. JP1984114885A. 1984-07-03. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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