Manufacture of semiconductor light emitting device
文献类型：专利
| 作者 | NAGASAKA HIROKO; MOGI NAOTO; SHIMADA NAOHIRO; KOMATSUBARA TADASHI; NAKAMURA MASARU |
| 发表日期 | 1986-08-16 |
| 专利号 | JP1986183986A |
| 著作权人 | TOKYO SHIBAURA ELECTRIC CO |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor light emitting device |
| 英文摘要 | PURPOSE:To obtain the title device of high output and high reliability which is easily produced, by a method wherein the first semiconductor substrate with a hetero junction structure and the second semiconductor substrate with a structure acting as current stricture or mode control are directly joined to each other. CONSTITUTION:A clad layer 12, an undoped active layer 13, and a clad layer 14 are successively grown above an N-GaAs substrate 11, thus forming a double hetero junction structure (first structure). Next, the surface of the clad layer 14 is polished into mirror. On the other hand, a P-SiC substrate 15 is provided with a metal mask in stripe form, and a high-resistant layer 16 is formed by front implantation, thus forming the second structure. The surface of the sub strate 15 is polished into mirror. The mirror-polished surfaces of the substrates 11, 15 are made opposed, brought into close contact, and adhered by heat treat ment. Next, the substrate 11 is removed, and the exposed surface of the clad layer 12 is polished into mirror; then, an N-SiC substrate (third semiconductor) 18 is adhered. A semiconductor laser chip is prepared by cutting this element for each stripe. |
| 公开日期 | 1986-08-16 |
| 申请日期 | 1985-02-08 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/86665]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | TOKYO SHIBAURA ELECTRIC CO |
| 推荐引用方式 GB/T 7714 | NAGASAKA HIROKO,MOGI NAOTO,SHIMADA NAOHIRO,et al. Manufacture of semiconductor light emitting device. JP1986183986A. 1986-08-16. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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