Manufacture of semiconductor laser
文献类型：专利
| 作者 | ABE YUJI; OTSUKA KENICHI; SUGIMOTO HIROSHI; OISHI TOSHIYUKI; MATSUI TERUHITO |
| 发表日期 | 1990-04-26 |
| 专利号 | JP1990114588A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser |
| 英文摘要 | PURPOSE:To limit the number of crystal growth operations to two by a method wherein an island-shaped stripe of an active layer is surrounded by a stripe of a waveguide layer and a side part is filled by a mass transport method. CONSTITUTION:The following two are formed: a first semiconductor layer 4 whose forbidden band width is smaller than that of a semiconductor substrate 1 where a stripe-shaped groove of a waveguide part connected to stripe-shaped grooves on both sides of a light-emitting part has been formed; a second semiconductor layer 2 whose forbidden band width filling the groove is smaller than that of the semiconductor substrate 1 and larger than that of the first semiconductor layer 4. After that, a third semiconductor layer 13, of a second conductivity type, whose forbidden band width is larger than that of the second semiconductor layer 2 is grown; the third semiconductor layer 13 and the first semiconductor layer 4 are removed selectively until side faces of the second semiconductor layer 2 are exposed in such a way that a stripe shape containing the light- emitting part and a stripe of the waveguide part is left; side faces of the second semiconductor layer 2 are filled by using a mass transport method. Thereby, it is possible to limit the number of crystal growth operations to two. |
| 公开日期 | 1990-04-26 |
| 申请日期 | 1988-10-24 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/86668]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | ABE YUJI,OTSUKA KENICHI,SUGIMOTO HIROSHI,et al. Manufacture of semiconductor laser. JP1990114588A. 1990-04-26. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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