Semiconductor light emitting device
文献类型：专利
| 作者 | FURUMIYA SATOSHI |
| 发表日期 | 1984-06-29 |
| 专利号 | JP1984112673A |
| 著作权人 | FUJITSU KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light emitting device |
| 英文摘要 | PURPOSE:To improve the light emitting efficiency of a light emitting device of double hetero structure formed of semiconductor of InGaAsP/InP series by composing the conductive type of regions between which an active layer is interposed of an N type region which contains high density of Se, thereby enhancing the current limiting effect. CONSTITUTION:A P type lower clad layer 12 and an N type InP layer 13' formed of the lower layer of a current limiting layer are laminated and grown on a P type InP substrate 11, and opened with a V-shaped groove 32 for forming a light emitting unit which is intruded into the layer 12 while moving along the optical axis in (110) direction by etching. Then, a P type InP layer 14 to become a current limiting layer is accumulated on the overall surface including the groove, a lower clad layer 14' is produced in the groove 21, an undoped InGaAsP layer 15 is covered on the overall surface, and a delta-shaped active layer 15' having a thick center is formed on the layer 14'. In this structure, Se of approx. 1X10/cm is contained in advance in the layer 13', and the layer 15' is enclosed by an N type InP layer 13 which contains high density of Se. |
| 公开日期 | 1984-06-29 |
| 申请日期 | 1982-12-20 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/86679]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU KK |
| 推荐引用方式 GB/T 7714 | FURUMIYA SATOSHI. Semiconductor light emitting device. JP1984112673A. 1984-06-29. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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