Semiconductor laser
文献类型：专利
| 作者 | UMEDA JIYUNICHI; NAKAJIMA HISAO; KURODA TAKAROU; KAJIMURA TAKASHI |
| 发表日期 | 1985-09-21 |
| 专利号 | JP1985186082A |
| 著作权人 | HITACHI SEISAKUSHO KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To perform a large output by periodically disposing a plurality of active layers on the different surfaces, thereby aligning the phases of the laser lights of the respective stripes. CONSTITUTION:A Ga1-yAlyAs clad layer 2, an active layer 3, and a Ga1-zAlzAs clad layer 4 having, for example 1+ or -0.5mum of thickness are continuously grown sequentially on a GaAs substrate 1 formed with suitable parallel grooves, electrode layers 5, 6 are formed on the layer 4 and the back surface of the substrate 1 to form a laser. The layer 3 is quasi-periodically bent toward the perpendicular direction to the current direction and the laser oscillating direction, a refractive index difference waveguide structure is formed to specify the laser oscillating mode as multipoint light emitting lasers. When the laser is operated, a light is emitted in the layer 3 to become a resonance laser light. This light is resonated while enclosed between the mirror surfaces. In the light distribution due to the light emission, the active layers 3a, 3b, 3c are partly superposed to be photocoupled. Thus, the laser oscillation of the stripes are held in the prescribed relation for the phases in the same wavelength. |
| 公开日期 | 1985-09-21 |
| 申请日期 | 1985-01-30 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/86683]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI SEISAKUSHO KK |
| 推荐引用方式 GB/T 7714 | UMEDA JIYUNICHI,NAKAJIMA HISAO,KURODA TAKAROU,et al. Semiconductor laser. JP1985186082A. 1985-09-21. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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