Semiconductor laser element and manufacture thereof
文献类型：专利
| 作者 | IWAI NORIHIRO; MATSUMOTO SHIGETO |
| 发表日期 | 1992-11-10 |
| 专利号 | JP1992320083A |
| 著作权人 | FURUKAWA ELECTRIC CO LTD:THE |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser element and manufacture thereof |
| 英文摘要 | PURPOSE:To manufacture a buried type semiconductor laser element having characteristics of low threshold current and higher light output. CONSTITUTION:In a buried type semiconductor laser element in which the both sides of the mesa having a double hetero structure are embedded with a semiconductor blocking layer 6 with higher resistance, an n-type layer 7 to be a hole barrier is inserted between the semiconductor blocking layer 6 and the p-type clad layer 4 to not to contact the semiconductor blocking layer 6 with the p-type clad layer 4. |
| 公开日期 | 1992-11-10 |
| 申请日期 | 1991-04-18 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/86684]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FURUKAWA ELECTRIC CO LTD:THE |
| 推荐引用方式 GB/T 7714 | IWAI NORIHIRO,MATSUMOTO SHIGETO. Semiconductor laser element and manufacture thereof. JP1992320083A. 1992-11-10. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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