Manufacture of semiconductor device
文献类型：专利
| 作者 | TAKEUCHI TATSUYA; KURAMATA AKITO |
| 发表日期 | 1992-04-28 |
| 专利号 | JP1992127490A |
| 著作权人 | FUJITSU LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor device |
| 英文摘要 | PURPOSE:To obtain a large optical output and to form a flat surface by growing at a first temperature for obtaining large optical output characteristic at the initial of growth, and then growing at a second temperature higher than the first temperature to obtain flatness and high resistance. CONSTITUTION:A growth is conducted at 570 deg.C for 5min at the initial growth having largest influence to optical output characteristic by an organic metal vapor growing method (MOVPE method), the growing temperature is raised to 620 deg.C during 3min thereafter, and then grown at 620 deg.C for easily obtaining flatness for 30min. In this case, growing temperatures of 520, 620 deg.C are so controlled by a temperature controlled as to become constant. In this case, Fe- doping gas flow rate is varied by considering the growing temperature and the growing surface orientation at the initial of growing. That is, it is reduced to 15cc in first 5min, then reduced to 10cc in the following 3min, and set to 10cc in 30min. A semiconductor laser obtained in this manner is formed with InP Fe-doped high resistance buried layers 13 with excellent flatness at both sides of an active layer 11 and a laser clad layer 12 formed on an n-type InP board 10. |
| 公开日期 | 1992-04-28 |
| 申请日期 | 1990-09-18 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/86687]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | TAKEUCHI TATSUYA,KURAMATA AKITO. Manufacture of semiconductor device. JP1992127490A. 1992-04-28. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。