Buried type semiconductor laser
文献类型：专利
| 作者 | TANAKA AKIRA; MATSUYAMA TAKAYUKI |
| 发表日期 | 1988-08-11 |
| 专利号 | JP1988194383A |
| 著作权人 | TOSHIBA CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Buried type semiconductor laser |
| 英文摘要 | PURPOSE:To lower the contact resistance of an ohmic layer and an electrode layer, and to improve characteristics by forming the ohmic layer extending beyond a clad layer from a buried layer and also bringing the side surface of the ohmic layer into contact with the electrode layer. CONSTITUTION:An inverted mesa-shaped semiconductor crystal consisting of an un-doped GaInAsP active layer 13 and a P-InP clad layer 14 is buried into a semiconductor crystal in which a P-InP layer 16, an N-InP layer 17 and a GaInAsP gap layer 18 for flattening the surface are laminated in succession-that is, a P-GaInAsP ohmic layer 15 is shaped under the state in which it protrudes from the surface of the buried layer. Accordingly, since not only the surface 15b of the P-GaInAsP ohmic layer 15 but also the side surface 15a of the layer 15 can be brought into contact with an electrode layer 20a, the contact resistance of the ohmic layer 15 and the electrode layer 20a can be lowered without using a means such as the diffusion of Zn, thus improving the characteristics of a buried type semiconductor laser. |
| 公开日期 | 1988-08-11 |
| 申请日期 | 1987-02-09 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/86694]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | TOSHIBA CORP |
| 推荐引用方式 GB/T 7714 | TANAKA AKIRA,MATSUYAMA TAKAYUKI. Buried type semiconductor laser. JP1988194383A. 1988-08-11. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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